ITR9907 Features
․Fast response time
․High sensitivity
․Cut-off visible wavelength λp=940nm
․Thin
․Small package
․Pb free
․The product itself will remain within RoHS compliant version
ITR9907 Descriptions
The ITR9907 consists of an infrared emitting Diode and a silicon phototransistor encased in a black Thermo-plastic housing. The advantage of the device is the small package. Phototransistor receives radiation from the IRED only, and avoids the noise from ambient light.
ITR9907 Applications
․Camera
․Copier
․Scanner
․Non-contact Switching
․For Direct PC Board
ITR9907 Absolute Maximum Ratings (Ta=25℃)
Input Power Dissipation at(or below) 25℃ Free Air Temperature( Pd) 75mW
Input Reverse Voltage (VR) 5V
Input Forward Current ( IF) 50mA
Output Collector Power Dissipation (PC) 75mW
Output Collector Current( IC) 20mA
Output Collector-Emitter Voltage (BVCEO) 30V
Output Emitter-Collector Voltage( BVECO) 5V
Operating Temperature (Topr) -25~+80 ℃
Storage Temperature (Tstg) -40~+85 ℃
Lead Soldering Temperature (Tsol )260 ℃≦5sec
ITR9907 Electro-Optical Characteristics (Ta=25℃)
Input Forward Voltage VF ---(Typ)1.2~(Max )1.6 V ---IF=20mA
Input Reverse Current IR --- (Max)10uA--- VR=5V
Input Peak Wavelength λP ---(Typ) 940nm--- IF=20mA
Output Dark Current ICEO --- (Max)100nA--- VCE=10V
Output C-E Saturation voltage VCE(sat) ---(Max)0.4V--- IC=2mA ,Ee=1mW/cm2
Transfer Characteristics Collector Current IC(ON) (Min.)50uA---VCE=5V, IF=5mA
Transfer Characteristics Leakage Current ICEOD---(Max)1uA---VCE=5V, IF=5mA
Transfer Characteristics Rise time tr --- (Typ)15 us--- VCE=2V IC=1mA RL=1KΩ
Transfer Characteristics Fall time tf --- (Typ) 15us--- VCE=2V IC=1mA RL=1KΩ